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Dithiocarbamate complexes [Cd(S 2 CNCy 2 ) 2 (py)]  (1) , [In(S 2 CNCy 2 ) 3 ]·2py  (2)  and [Zn(S2CNCy 2 ) 2 (py)]  (3)  were synthesized and toluene solution of  (1)  and  (2)  was used as dual source precursor for the synthesis of CdIn 2 S 4  (CIS), while that of  (1)  and  (3)  was applied for the deposition of Cd 7.23 Zn 2.77 S 10 –ZnS composite (CZS-ZS) thin film photoan-odes by employing single step aerosol assisted chemical vapor deposition (AACVD) technique. Deposition experiments were performed at 500°C under an inert ambient of argon gas. The structural properties of deposited films were evaluated by using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. The field emission scanning electron microscopy (FESEM) exposed surface morphologies while UV-Visible spectrophotometry revealed that CIS is low band gap photoanode in comparison to CZS-ZS. The comparison of photoelectrochemical (PEC) responses measured in identical conditions in terms of linear sweep voltammetry (LSV) depicts photocurrent density of 4.4 mA /cm 2  and 2.9 mA/cm 2  at applied potential of 0.7 V under solar light intensity of 100 mW/cm 2  for CIS and CZS-ZS respectively. Further, electrochemical impedance spectroscopy (EIS) confirms that PEC properties of CIS are superior to CZS-ZS photoanode as the former offer less charge transfer resistance (R ct ) 0.03 MΩ in comparison to CZS-ZS having R ct  value of 0.06 MΩ.

Fabrication, characterization, and photocatalytic performance of ternary cadmium chalcogenides CdIn 2 S 4 and Cd 7.23 Zn 2.77 S 10 -ZnS thin films