English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The future of the industry development depends greatly on the permanently ensured energy needs and can be achieved only through the use of a variety of sustainable energy sources where the solar energy, which gains its optimal exploitation directly by linking it to the properties of solar cells and in particular to the crystallographic quality of the used semiconductor substrates, is one of them. Many growth processes are used to obtain a high quality of semiconductor formation and deposition, among them the DC sputtering. In this work, based on the Monte-Carlo method, a 3D DC sputtering simulation of theCZTS{\mathrm{CZTS}},Si{\mathrm{Si}}andCIGS{\mathrm{CIGS}}semiconductors thin film formation is proposed by considering Argon as vacuum chamber bombardment gas. We extrapolate firstly the best sputtering yield possible of the semiconductorsCZTS{\mathrm{CZTS}}and Silicon represented by their chemical formulasCu2⁢ZnSnS4{\mathrm{Cu}_{2}\mathrm{Zn}\mathrm{Sn}\mathrm{S}_{4}}andSi{\mathrm{Si}}, respectively, by the application of different energies and incidence angles. From the obtained results, firstly we deduce that the best sputtering angle is85∘{85^{\circ}}; in the same time,CZTS{\mathrm{CZTS}}is more efficient comparing to theSi{\mathrm{Si}}. Secondly, with the application of this angle (85∘{85^{\circ}}) in the sputtering process for theCZTS{\mathrm{CZTS}}(Cu2⁢ZnSnS4{\mathrm{Cu}_{2}\mathrm{Zn}\mathrm{Sn}\mathrm{S}_{4}}) andCIGS{\mathrm{CIGS}}represented by its chemical formulaCuInx⁢Ga(1-x)⁢Se2{\mathrm{Cu}\mathrm{In}_{x}\mathrm{Ga}_{(1-x)}\mathrm{Se}_{2}}, and the variation of the bombardment energy in order to find the total ejected atoms from each element of these two materials, we deduce that the sulfide (S4{\mathrm{S}_{4}}) and selenide (Se2{\mathrm{Se}_{2}}) elements give the majority of the sputtering yield amount obtained.

3D sputtering simulations of the CZTS, Si and CIGS thin films using Monte-Carlo method