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This paper addresses the detection improvement of Gate Oxide Short defect using a delay test strategy. To achieve this objective, the concept of detectability interval is first introduced in the context of detection of short defects using Boolean test technique. Then this paradigm is extended to the detection of Gate Oxide Short defects using delay testing. Finally, it is shown that it is possible to significantly improve the detection of this kind of defect.

Testing for gate oxide short defects using the detectability interval paradigm