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This paper presents a study of the complex permittivity of n - type copper indium selenide semiconductor compound at low temperatures down to −175 °C. Alternating current with frequency varying between 20 Hz and 1 MHz is applied to the material in order to measure the dielectric constant  ɛ ′ and dielectric loss  D =   ɛ ″/ ɛ ′.  ɛ ′ is found to decrease with temperature and frequency, whereas  D  decreases with frequency and increases with temperature. The experimental data of  ɛ ″ agree with the expressionε″=   Aωmω   ,   T${\varepsilon }^{{\prime\prime}}=A{\omega }^{m\left(\omega ,T\right)}$, where the frequency exponent  m ( ω ,  T ), calculated through the relationmω   ,   T=∂   ⁡   lnε″/   ∂   ⁡   ln   ⁡   ωT$m\left(\omega ,T\right)={\left.\left(\partial \mathrm{ln}{\varepsilon }^{{\prime\prime}}/\partial \mathrm{ln}\omega \right.\right)}_{T}$, shows a frequency and temperature dependence. The data are analyzed in light of existing theoretical models.

Complex permittivity and predominance of non-overlapping small-polaron tunneling conduction process in copper indium selenide compound