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The interpretation of marker experiments in studying the formation mechanism and defect structure of higher oxides during oxidation of lower oxides, showing rather high deviations from stoichiometry, has been discussed. It has been shown that correct results can be obtained only if the concentration of point defects in the substrate is taken into account. Theoretical considerations presented in this paper have been illustrated by the experimental results obtained during sulphidation of highly disordered Co 1- y  S to form CoS 2 , as well as Ni 1- y  S to form NiS 2 .

Marker Method in Studying the Defect Structure in Products of the Oxidation of Highly Disordered Substrates