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Pb(Zr,Ti)O 3  (PZT)-based ternary system thin films,  x Pb(Ni,Nb)O 3 –(1– x )PZT (50/50) (PNN–PZT), are grown on Pt/TiO 2 /SiO 2 /Si substrates using radio-frequency magnetron sputtering system. The intrinsic PZT (50/50) thin films are also deposited for comparison. XRD data display a perovskite structure in PNN–PZT thin films, which is similar with that of PZT films. On the other hand, the adding of PNN induces a change in the ratio of (200)/(002) peak intensity in the diffraction patterns, and the tetragonality of PNN–PZT thin films decreases with increasing  x . The morphotropic phase boundary (MPB) of PNN–PZT thin film system is confirmed near the composition of 0.05PNN–0.95PZT. PNN–PZT thin films exhibit excellent piezoelectricity and ferroelectricity which are distinctly better than those of PZT thin films. In particular, very high remanent polarization,  P  r =99 μC/cm 2 , small coercive field of 55 kV/cm, large relative dielectric constants,  ε  r =2,030 and distinct piezoelectric response are observed from sample 0.05PNN–0.95PZT.

Crystal Structures and Properties of Pb(Ni 1/3 ,Nb 2/3 )O 3 –Pb(Zr 1/2 ,Ti 1/2 )O 3 Thin Films on Silicon Substrates