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Ca 0.15 Zr 0.85 O 1.85  (CSZ) films were grown on Pt/Ti/SiO 2 /Si substrates at various temperatures using radio-frequency (RF) magnetron sputtering with a CaZrO 3  target. Crystalline CSZ phase was formed in the film grown even at room temperature (RT). For the film grown at 300°C, a dielectric constant ( k ) of value 27.6 and a low tan  δ  of 0.005 were obtained at 100 kHz, and a similar  k  value of 26.7 with a high  Q -value of 646 was obtained at 2.0 GHz. This film also showed a large capacitance density (264 nF/cm 2 ), a small TCC (75 ppm/°C at 100 kHz), a low leakage current (1.44×10 −8  A/cm 2  at 1.5 MV/cm), and a large breakdown field strength (2.25 MV/cm). Moreover, a 600 nm-thick CSZ film grown on polyimide substrate at RT satisfied all the ITRS 2016 requirements for a capacitor on an organic substrate. Therefore, the CSZ film, grown at a temperature ≤300°C, is a good candidate for use in embedded capacitors in printed circuit boards.

Ca 0.15 Zr 0.85 O 1.85 Thin Film for Application to MIM Capacitor on Organic Substrate