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The paper presents the results of characterization of MOS structures with aluminum oxide layer deposited by ALD method on silicon carbide substrates. The effect of the application of thin SiO 2  buffer layer on the electrical properties of the MOS structures with Al 2 O 3  layer has been examined. Critical electric field values at the level of 7.5–8 MV/cm were obtained. The use of 5 nm thick SiO 2  buffer layer caused a decrease in the leakage current of the gate by more than two decade of magnitude. Evaluated density of trap states near the conduction band of silicon carbide in Al 2 O 3 /4H-SiC MOS is about of 1×10 13  eV −1 cm −2 . In contrast, the density of the trap states in the Al 2 O 3 /SiO 2 /4H-SiC structure is lower about of one decade of magnitude  i.e.  1×10 12  eV −1 cm −2 . A remarkable change in the MOS structure is also a decrease of density of electron traps located deeply in the 4H-SiC conduction band below detection limit due to using of the SiO 2  buffer layer.

Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures