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Present-day thermode bond systems for the assembly of radio-frequency identification (RFID) chips are mechanically inflexible, difficult to control, and will not meet future manufacturing challenges sufficiently. Chip bonding, one of the key processes in the production of integrated circuits (ICs), has a high potential for optimization with respect to process duration and process flexibility. For this purpose, the technologies used, so far, are supposed to be replaced by a transmission laser-bonding process using low-melting eutectic alloys. In this study, successful bonding investigations of mock silicon chips and of RFID chips on flexible polymer substrates are presented using the low-melting eutectic alloy, 52In48Sn, and a laser with a wavelength of 2 μm.

Chip bonding of low-melting eutectic alloys by transmitted laser radiation