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Semiconductor nanowires are currently at the forefront of research in the areas of nanoelectronics and energy conversion. In all these studies, realising electrical contacts and statistically relevant measurements is a key issue. We propose a method that enables to contact hundreds of nanowires on a single wafer in an extremely fast electron beam lithography session. The method is applied to nanowire–based radial GaAs p–i–n junction. Current–voltage characteristics are shown, along with scanning photocurrent mapping.

Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction