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Applications in high-efficiency Si/β-FeSi2 heterojunction solar cells require the preparation of crack-free β-FeSi2 films on silicon. In a previous study, we obtained crack-free β-FeSi2 films on silicon(100) just substrate by substrate heating during RF-sputtering even though we annealed the films at temperatures as high as 900°C after deposition. However, these films contained a numerous silicon crystalline grains because of substrate heating. Moreover, this process required more energy for substrate heating during deposition. In this study, FeSix films were deposited on silicon(100) substrate 4° off the [110] direction at room temperature through the RF sputtering method using an FeSi3 target. The film annealed at 900°C also contained a large amount of silicon. Different from the films on silicon(100) just substrate, however, the film developed cracks on its surface.

Uneven Distribution of Silicon Crystalline Grains in RF-Sputtered β-FeSi<sub>2</sub> Films Deposited on Off-Oriented Silicon Substrate