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In this paper, the inelastic thermal spike model extended to multilayered systems was applied to Cu/a-Ge system and compared to the experimental results available in literature. Evidence of molten phase formation from both sides of the interface has been identified for both the irradiations at room temperature and 77 K. However, comparison with the experimental results reveals, in addition to liquid diffusion, a further unknown contribution to mixing for room temperature irradiations. We suggested that solid state diffusion of Cu atoms was enhanced in radiation-induced porous-structure in a-Ge at room temperature.

Does swift heavy ion beam mixing in metal/a-Ge interface result from transient thermal process?