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Low-voltage electroluminescence (EL) at 390 nm was obtained in a MIS structure at applied voltage of 15-30 V from 3 at.% Ge-implanted 50-nm SiO2 layer samples after the successive two-stage annealing. From the optical emission, Ge-related oxygen deficiency centers (Ge-ODCs) are speculated to exist at a shallow depth. To clarify the creation depth of Ge-ODCs and roles of nanoparticles (NPs), Ge-oxidation states in the SiO2 layer and Ge NP were measured by two methods, i.e., X-ray photoelectron spectrometry (XPS) and 3-dimensional atom probe (3D-AP) after annealing: (1) in nitrogen gas flow at 700oC for 1h and (2) in air flow at 700oC for 1h. In XPS with Ar-etching, a significant increase of Ge-O bonds was shown at 15 30 nm in depth. Ge-Ge bonds decreased in the whole depth region. In 3D-AP, relatively large four Ge NPs were detected in the Ge-implanted SiO2 layer. The shallowest NP was spherical with at diameter of 5 nm and had a Ge-core at 2 nm in diameter and Ge-oxide shell of with 1 2 in thickness. So Ge-O bonds were surely created between core and shell. The role of Ge NP is to ensure forming G-ODCs in NP and interrupting progress of Ge oxidation to the deeper side.

transactions of the materials research society of japan

Evaluation of Ge Oxidation State in Ge Nanoparticles Formed in Thin SiO&lt;sub&gt;2&lt;/sub&gt; Layer by Negative-Ion Implantation and Successive Two-Stage Annealing