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Sputter etching (SE) of Si substrate is employed to fabricate highly-oriented -FeSi2 film on Si by means of ion beam sputter deposition (IBSD). In the present study, dependence on the irradiated fluence at the incident SE energies of 1 and 3 keV and at the deposition temperatures of 923 and 973 K, was investigated to discuss whether it is possible to obtain highly-oriented -FeSi2 thin film with less radiation damage. At 973 K, irradiation of 3 keV Ne to an ion fluence of 3.7x10 Ne/cm was needed to avoid the formation of -FeSi2 phase and to obtain highly-oriented -FeSi2 (100) film on Si (100) substrate. Whereas at 923 K highly-oriented -FeSi2 (100) film was obtained with SE condition of 3 keV and 3.7x10 Ne/cm, which is merely 1/10 of the fluence required at 973 K. This means that the -FeSi2 film can be fabricated with much less radiation damage so that presence of defects is considered to be much reduced.

Fabrication of highly-oriented silicide film on Si substrate treated by low-energy ion beam