English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Built-in potential maps of metal-oxide-semiconductor field effect transistors (MOSFETs) with gate lengths of 30 and 150 nm were measured on cross sectional Si(110) surfaces covered with ultra-thin oxide. The maps were obtained by measuring the contact potential difference (CPD) using multimode scanning probe microscopy (MSPM) with a vibrating probe in the constant force mode. The improved spatial resolution and the sensitivity to the electrostatic potential were achieved for an optimal probe-sample gap (~1 nm) and vibration amplitude of 0.2 nm. The capability and challenges of the measurement method are discussed by comparing measured CPD maps with device simulation results.

Built-in Potential Mapping of Silicon Field Effect Transistor Cross Sections by Multimode Scanning Probe Microscopy