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GaN-based solar cells fabricating greatly depends on the using of cheap substrate and the high quality of the as-grown GaN films. The high c-axis preferred orientation GaN films were prepared on amorphous quartz glass substrate using self developed electron cyclotron resonance plasma enhanced metal-organic chemical vapor deposition (ECR-PEMOCVD) system. The properties of the GaN films were characterized by in situ Reflection High Energy Electron Diffraction (RHEED), X-ray diffraction (XRD), Transmission Spectra and photo-luminescence (PL) spectra. The results show that concentric diffraction RHEED rings demonstrated the successful nitriding of conventional amorhpous quartz glass substrates at low temperature of the 430°C, and the temperature is far below the strain point of glass. And the nitridation with as-grown GaN films deposition exhibited stronger c-axis orientation, and the average grain size increased significantly. But which were increased the nitriding time to 30 min, and the as-grown films show the deposition deteriorated under the condition, which means that the quality of GaN deposition depends on the nitriding time, and the experiment results show the 15 min was proved to be the optimum time.

Effect of Nitridation Properties for High Quality GaN Deposition on Amorhpous Quartz Glass at Low Temperature via ECR-PEMOCVD