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Phosphorus-doped diamond is relevant for applications in sensing,optoelectronics and quantum photonics, since the unique optical properties ofcolor centers in diamond can be combined with the n-type conductivity attainedby the inclusion of phosphorus. Here, we investigate the photoluminescencesignal of the nitrogen-vacancy and silicon-vacancy color centers inphosphorus-doped diamond as a function of temperature starting from ambientconditions up to about 100$^\circ$ Celsius, focusing on the zero-phonon line(ZPL). We find that the wavelength and width of the ZPL of the two colorcenters exhibit a comparable dependence on temperature, despite the strongdifference in the photoluminescence spectra. Moreover, the temperaturesensitivity of the ZPL of the silicon-vacancy center is not significantlyaffected by phosphorus-doping, as we infer by comparison with silicon-vacancycenters in electronic-grade single-crystal diamond.

Photoluminescence of nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond at room and higher temperatures