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InN has received great research attention because of the small bandgap (~ 0.7 eV) and superior electrical transport properties. As a wurtzite crystal lacks inversion symmetry along c-axis direction, Inpolar and N-polar InN exhibit different properties. Therefore, investigation of near-surface structure and electronic states of polar InN films are important to fully realize their potential. Due to the element and chemical state specificity and the larger probing depth, hard X-ray photoelectron diffraction (HXPD) was used to investigate the near-surface structures of polar InN films [1].

Chemical-state-discriminated hard X-ray photoelectron diffraction study for polar InN