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Scanning spreading resistance microscopy (SSRM) is a powerful technique for 2D-carrier profiling of silicon devices. We developed high spatial resolution SSRM by measuring in a high vacuum and achieved 1 nm spatial resolution. We also confirmed wide dynamic range of measuring concentration of 1015 through 1020 cm-3. In this paper, we demonstrate experimental aspects and procedures of SSRM measurement, and applications to scaled CMOSFETs. SSRM in a high vacuum is shown to have high potential for carrier analysis of future devices. Technical issues affecting reproducibility and quantitative analysis of carrier concentration are also discussed.

journal of surface analysis

Development and Technical Issues on 2D-Carrier Profiling of Silicon Devices by Scanning Spreading Resistance Microscopy (SSRM) with 1 nm spatial resolution