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The optimal condition suitable for using a quadrupole SIMS (Q-SIMS) instrument to measure the Si concentration in GaN layers for both selectively isotopic Si-implanted GaN and epitaxially Si-doped GaN was presented. The detection of SiNmolecular ions under Cs primary ion bombardment realized the best dynamic range and the lowest detection limit for Q-SIMS analysis of Si in GaN layers. The detection limits of selectively isotopic Si and the total amount of Si naturally occurring isotopes in GaN layers can reach 2 10 cm and 8 10 cm, respectively. We concluded that a Q-SIMS instrument was applicable for the analysis of the Si depth distribution in GaN layers.

Quadrupole SIMS Analysis of Si Concentration in GaN Layers by a Molecular Ion Detection with a Minor Isotope