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Inelastic scattering cross sections of Si in the form of ( E) K   , the production of the inelastic mean free path and the inelastic scattering cross section, were obtained from the angular dependent reflection electron energy loss spectroscopy (REELS) spectra. The REELS spectra with the energy and angular dependence were measured using an inclined sample holder. The spectra were taken for the primary beam energy from 500 to 4500 eV at a fixed incidence angle and various emission angles. For each primary energy, a series of ten ( E) K   spectra were obtained. The experimental ( E) K   spectra obtained from the angular dependent REELS spectra were compared in absolute unit. It clearly showed the variation in the relative contribution of bulk and surface losses in these series of the ( E) K   spectra after subtracting the multiple scattering. It allowed separating the surface and bulk loss contribution based on the changing of the emission angles.

Inelastic Scattering Cross Section of Si Determined from Angular Dependent Reflection Electron Energy Loss Spectra