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In surface analysis such as AES (Auger electron spectroscopy) or XPS (x-ray photoelectron spectroscopy), ion sputtering is generally used in order to remove contaminated layers and to perform an in-depth profiling. It is important to align an ion beam at an analysis area and to estimate sputtering rates prior to an actual measurement. In this report, two methods are introduced how to align the ion beam. (a) Faraday cup method is applicable to quantitatively estimate the ion beam by monitoring current and (b) SiO2 method is an easy way to visually align the ion beam position. Detailed alignment procedures are promised to be useful for daily analysis workers.

Ion Beam Alignment Procedures using a Faraday Cup or a Silicon Dioxide Film on Silicon Substrate with Auger Electron Microscope