English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Networked nanographite (NNG) was grown by using photoemission-assisted plasma enhanced chemical vapor deposition (CVD) on SiO2 (90 nm) /Si substrates and the career gas dependence of electric resistivity, chemical configuration, and grain size was investigated from Raman spectroscopy, SIMS, and four probes method. In this study, CH4/Ar and CH4/H2 gases were used. NNG with the thickness from 2〜60 nm was grown by changing the growth period. Resistivity of thin films showed clearly decreases in CH4/H2 in an order of magnitude nevertheless their grain sizes were almost same at the length of 9 nm. From SIMS measurement, hydrogen concentration of the sample grown by CH4/H2 was 3 times less than that of by CH4/Ar. From these results, it is found that hydrogen termination at grain boundary is the cause of low electric conductivity, and H radicals in CH4/H2 plasma may remove the terminated hydrogen by H abstraction reaction in CVD process.

Crystallographic and Electric Properties of Multilayer Graphene Grown by Photoemission Assisted-Plasma Enhanced CVD: H2 versus Ar for career gas