Ultralow Power TFT with Stacked Gate Oxide Consisting of Ultrathin Oxide Layer Formed by the Nitric Acid Oxidation of Si (NAOS) Method and CVD-SiO2 Thin Layer | Zendy

AI Assistant Blog Pricing

Ultralow Power TFT with Stacked Gate Oxide Consisting of Ultrathin Oxide Layer Formed by the Nitric Acid Oxidation of Si (NAOS) Method and CVD-SiO2 Thin Layer

Details

The content you want is available to Zendy users.Already have an account? Click here. to sign in.