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X-ray photoelectron spectroscopy (XPS) has been used to investigate the Si(100) surfaces exposed to 02 at room temperature and subsequently heated to various temperatures ranging from 200°C to 800°C. Each 01s spectrum observed was deconvoluted into two Gaussian curves with peaks at (531.8 ± 0.3) eV and (533.6 ± 0.3) eV. The surface density of high binding energy component (533.6 ± 0.3) eV decreased with increasing temperature up to 400°C. On the other hand, the surface density of low binding energy component (531.8 ± 0.3) eV increased with increasing temperature up to 400°C. Furthermore high binding energy component increased as a result of heating at a high temperature above 400°C, and all of the oxygen adsorbed were removed from the surface by heating at temperatures above 750°C. The change of the surface density of the two components with temperature was discussed in relation to the bonding states of oxygen to silicon surfaces.

Industrial Materials Processed by Surface and Interface Reactions. Effect of Heat Treatments on the Oxygen Adsorbed on Si(100) Surface.