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We evaluated the fixed charge (Qf) and the interface state density (Dit) from the capacitance—voltage (C—V) measurement before and after rapid thermal cycle annealing (RTCA) using p-type silicon in which the passivation was performed with aluminum oxide (Al2O3) film by atomic layer deposition (ALD). From C—V measurement we obtained the surface potential (VS), accumulation and depletion width, and as a result, energy band diagrams were produced. It was determined that a barrier height of approximately 100 mV was induced by fixed negative charges in the Al2O3 layer near the interface to the p-type Si substrate. The field effect of the Al2O3 passivation layer created by RTCA strongly remains without depending on the gate voltage (VG). [DOI: 10.1380/ejssnt.2012.22]

e-journal of surface science and nanotechnology

Energy Band Diagram near the Interface of Aluminum Oxide on p-Si Fabricated by Atomic Layer Deposition without/with Rapid Thermal Cycle Annealing Determined by Capacitance—Voltage Measurements