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We determined the structures of Si(111)-4×1-In and Si(111)-8×2-In surfaces that are formed at 293 K and 60 K, respectively, through the rocking curve analyses of reflection high-energy positron diffraction (RHEPD). The structure of Si(111)-4×1-In surface is in good agreement with the zigzag chain structure determined by the surface X-ray diffraction [O. Bunk et al., Phys. Rev. B 59, 12228 (1999)]. In the Si(111)-8×2-In surface, In atoms are displaced in two dimensional directions from the positions of zigzag chain structure. The structure of Si(111)-8×2-In surface determined here is compatible to the hexagon structure predicted by the first principles study [C. Gonzalez, F. Flores, and J. Ortega, Phys. Rev. Lett. 96, 136101 (2006)]. We determined the surface Debye-temperatures of 4×1 and 8×2 phases to be 80 K and 130 K, respectively. [DOI: 10.1380/ejssnt.2009.436]

Phase Transition of In/Si(111) Surface Studied by Reflection High-Energy Positron Diffraction