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With its industrial adaptability, epitaxial graphene (EG), formed by a UHV annealing of SiC substrates, is attracting recent attention. While hexagonal SiC bulk substrates have been solely used for this purpose, benefits in use of 3C-SiC virtual substrate founded on Si substrates could be enormous. We have succeeded in fabricating a graphene film on a 3C-SiC(111) virtual substrate, which was preformed on a Si(110) substrate by gas-source molecular beam epitaxy using monomethyl silane. The geometrical matching in this configuration greatly suppresses the strain in the SiC film, which is related to this successful formation of graphene. [DOI: 10.1380/ejssnt.2009.311]

Graphene Formation on a 3C-SiC(111) Thin Film Grown on Si(110) Substrate