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The Burstein-Moss shift and band gap narrowing of sputtered indium-doped zinc oxide (IZO) thin films are investigated as a function of carrier concentrations. The optical band gap shifts below the carrier concentration of 5.61 × 10 19  cm -3  are well-described by the Burstein-Moss model. For carrier concentrations higher than 8.71 × 10 19  cm -3  the shift decreases, indicating that band gap narrowing mechanisms are increasingly significant and are competing with the Burstein-Moss effect. The incorporation of In causes the resistivity to decrease three orders of magnitude. As the mean-free path of carriers is less than the crystallite size, the resistivity is probably affected by ionized impurities as well as defect scattering mechanisms, but not grain boundary scattering. The  c  lattice constant as well as film stress is observed to increase in stages with increasing carrier concentration. The asymmetric XPS Zn 2p 3/2  peak in the film with the highest carrier concentration of 7.02 × 10 20  cm -3  suggests the presence of stacking defects in the ZnO lattice. The Raman peak at 274 cm -1  is attributed to lattice defects introduced by In dopants.

New Insights on the Burstein-Moss Shift and Band Gap Narrowing in Indium-Doped Zinc Oxide Thin Films