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Low cost, small footprint, highly efficient and mass producible on-chipwavelength-division-multiplexing (WDM) light sources are key components infuture silicon electronic and photonic integrated circuits (EPICs) which canfulfill the rapidly increasing bandwidth and lower energy per bit requirements.We present here, for the first time, a low noise high-channel-count 20 GHzpassively mode-locked quantum dot laser grown on complementarymetal-oxide-semiconductor compatible on-axis (001) silicon substrate. The laserdemonstrates a wide mode-locking regime in the O-band. A record low timingjitter value of 82.7 fs (4 - 80 MHz) and a narrow RF 3-dB linewidth of 1.8 kHzare measured. The 3 dB optical bandwidth of the comb is 6.1 nm (containing 58lines, with 80 lines within the 10 dB bandwidth). The integrated averagerelative intensity noise values of the whole spectrum and a single wavelengthchannel are - 152 dB/Hz and - 133 dB/Hz in the frequency range from 10 MHz to10 GHz, respectively. Utilizing 64 channels, an aggregate total transmissioncapacity of 4.1 terabits per second is realized by employing a 32 Gbaud Nyquistfour-level pulse amplitude modulation format. The demonstrated performancemakes the laser a compelling on-chip WDM source for multi-terabit/s opticalinterconnects in future large-scale silicon EPICs.

High-channel-count 20 GHz passively mode locked quantum dot laser directly grown on Si with 4.1 Tbit/s transmission capacity