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Reliable operation of photonic integrated circuits at cryogenic temperatureswould enable new capabilities for emerging computing platforms, such as quantumtechnologies and low-power cryogenic computing. The silicon-on-insulatorplatform is a highly promising approach to developing large-scale photonicintegrated circuits due to its exceptional manufacturability, CMOScompatibility and high component density. Fast, efficient and low-lossmodulation at cryogenic temperatures in silicon, however, remains anoutstanding challenge, particularly without the addition of exotic nonlinearoptical materials. In this paper, we demonstrate DC-Kerr-effect-basedmodulation at a temperature of 5 K at GHz speeds, in a silicon photonic devicefabricated exclusively within a CMOS process. This work opens up the path forthe integration of DC Kerr modulators in large-scale photonic integratedcircuits for emerging cryogenic classical and quantum computing applications.

Cryogenic operation of silicon photonic modulators based on DC Kerr effect