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Atomic monolayers represent a novel class of materials to study localized andfree excitons in two dimensions and to engineer optoelectronic devices based ontheir significant optical response. Here, we investigate the role of thesubstrate on the photoluminescense response of MoSe$_2$ and WSe$_2$ monolayersexfoliated either on SiO$_2$ or epitaxially grown InGaP substrates. In the caseof MoSe$_2$, we observe a significant qualitative modification of the emissionspectrum, which is widely dominated by the trion resonance on InGaP substrates.However, the effects of inhomogeneous broadening of the emission features arestrongly reduced. Even more strikingly, in sheets of WSe$_2$, we couldroutinely observe emission lines from localized excitons with linewidths downto the resolution limit of 70\,$\mu$ eV. This is in stark contrast to referencesamples featuring WSe$_2$ monolayers on SiO$_2$ surfaces, where the emissionspectra from localized defects are widely dominated by spectral diffusion andblinking behaviour. Our experiment outlines the enormous potential ofIII-V-monolayer hybrid architectures to obtain high quality emission signalsfrom atomic monolayers, which are straight forward to integrate intonanophotonic and integrated optoelectronic devices.

Substrate engineering for high quality emission of free and localized excitons from atomic monolayers in hybrid architectures