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We report Hf1-xTixO2 (0< = x< = 1) thin films (HTO) as index tunable and highly transparent materials for ultraviolet to near infrared integrated photonic devices. By varying the Ti concentration, reactive co-sputtered HTO thin films on thermal oxidized SiO2 on Si substrates show continuously tunable optical band gaps from 3.9 eV to larger than 5 eV. The film refractive index monotonically increases with Ti concentration, varying from 1.8 to 2.4 in the visible to near infrared wavelength range. Micro-disk amorphous HfO2 resonators on SiO2/Si substrates are fabricated using sputtering and lift-off method. A loaded quality factor of ~15800 at around 1580 nm wavelength is achieved in HfO2 disk resonators with diameters of 100 μm. The propagation loss of the HfO2 ridge waveguide is estimated to be 2.5 cm−1. The wide optical transparency range, variable index of refraction, low temperature, CMOS-compatible fabrication capability, and high optical transparency make amorphous HTO thin films promising candicates for integrated photonic applications.

Microstructure, optical properties, and optical resonators of Hf_1-xTi_xO_2 amorphous thin films