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We propose AlGaN-based GRaded-INdex Separate Confinement Heterostructure as a candidate for electrically pumped deep-UV semiconductor laser. Strong compositional fluctuations were introduced in the active region (75 nm-thick Al0.72Ga0.28N film grown by RF Plasma- assisted Molecular Beam Epitaxy) to obtain net modal optical gain peaked at 257 nm in excess of 80 cm −1 . We measured an optical gain threshold of 14 µJ/cm 2 . Because of polarization-doping of the compositionally graded AlGaN regions, which automatically leads to the formation of p-i-n junction, these results pave the way for lasing under electrical injection.

Deep-UV optical gain in AlGaN-based graded-index separate confinement heterostructure