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InP thin films have been grown on InP/Si substrate by epitaxial lateral overgrowth (ELOG). The nature, origin and filtering of extended defects in ELOG layers grown from single and double openings in SiO2 mask have been investigated. Whereas ELOG layers grown from double openings occasionally exhibit threading dislocations (TDs) at certain points of coalescence, TDs are completely absent in ELOG from single openings. Furthermore, stacking faults (SFs) observed in ELOG layers grown from both opening types originate not from coalescence, but possibly from formation during early stages of ELOG or simply propagate from the seed layer through the mask openings. A model describing their propagation is devised and applied to the existent conditions, showing that SFs can effectively be filtered under certain conditions. ELOG layers grown from identical patterns on InP substrate contained no defects, indicating that the defect-forming mechanism is in any case not inherent to ELOG itself.

Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth