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Er doped GaN (GaN:Er) p-i-n structures were prepared by metal organic chemical vapor deposition. Effects of growth pressure on the optical performance of GaN:Er p-i-n structures have been investigated. Electroluminescence measurements revealed that the optimal growth pressure window for obtaining strong infrared emission intensity at 1.54 µm is around 20 torr, while the greater amount of Ga vacancies or non-raditive transitions were observed from the ones grown at lower or higher pressure. Our results point to possible applications in optical communications using current injected optical amplifiers based on GaN:Er p-i-n structures.

Effects of growth pressure on erbium doped GaN infrared emitters synthesized by metal organic chemical vapor deposition