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Diode-pumping of Ti:sapphire provides a low-cost route to high-quality frequency-comb sources, exploiting the potential of direct diode modulation for wideband control of the carrier-envelope-offset frequency. We present here an f REP - and f CEO -locked, directly diode-pumped Ti:sapphire frequency comb, producing 66-fs pulses at 800 nm and employing f-to-2f interferometry and current modulation of a 462-nm blue laser diode to achieve a stabilization bandwidth extending to ∼70  kHz. Characterizations of the f REP and f CEO phase noise are compared to relative intensity noise spectra of the pump diodes to provide insights into how the diode design and performance transfer into the comb stability, suggesting a lower contribution to f REP and f CEO noise from the blue laser diode than from the green diode.

Characterization of a carrier-envelope-offset-stabilized blue- and green-diode-pumped Ti:sapphire frequency comb