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We present a comprehensive tensorial characterization of second-harmonicgeneration from silicon nitride films with varying composition. The sampleswere fabricated using plasma-enhanced chemical vapor deposition, and thematerial composition was varied by the reactive gas mixture in the process. Wefound a six-fold enhancement between the lowest and highest second-ordersusceptibility, with the highest value of approximately 5 pm/V from the mostsilicon-rich sample. Moreover, the optical losses were found to be sufficientlysmall (below 6 dB/cm) for applications. The tensorial results show that allsamples retain in-plane isotropy independent of silicon content, highlightingthe controllability of the fabrication process.

Enhancement of bulk second-harmonic generation from silicon nitride films by material composition