English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the zaia usage as premium feature

ZAIA

Presents the pdf analysis as premium feature

PDF Analysis

Insights

Presents the summarisation as premium feature

Summarisation

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the access of premium content as premium feature

Premium Content

Zendy Tools

Zendy Open

We demonstrate low-loss Ge-rich Si 0.2 Ge 0.8 waveguides on Si 1-x Ge x (x from 0 to 0.79) graded substrates operating in the mid-infrared wavelength range at λ=4.6  μm. Propagation losses as low as (1.5±0.5)dB/cm and (2±0.5)dB/cm were measured for the quasi-TE and quasi-TM polarizations, respectively. A total coupling loss (input/output) of only 10 dB was found for waveguide widths larger than 7 μm due to a good fiber-waveguide mode matching. Near-field optical mode profiles measured at the output waveguide facet allowed us to inspect the optical mode and precisely measure the modal effective area of each waveguide providing a good correlation between experiments and simulations. These results put forward the potential of low-index-contrast Si 1-x Ge x waveguides with high Ge concentration as fundamental blocks for mid-infrared photonic integrated circuits.

Low-loss Ge-rich Si_02Ge_08 waveguides for mid-infrared photonics