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Aluminum gallium arsenide has highly desirable properties for integratedparametric optical interactions: large material nonlinearities, maturelyestablished nanoscopic structuring through epitaxial growth and lithography,and a large band gap for broadband low-loss operation. However, its fullpotential for record-strength nonlinear interactions is only released when thesemiconductor is embedded within a dielectric cladding to produce highlyconfining waveguides. From simulations of such, we present second and thirdorder pair generation that could improve upon state-of-the-art quantum opticalsources and make novel regimes of strong parametric photon-photonnonlinearities accessible.

Engineering AlGaAs-on-insulator towards quantum optical applications