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Ultraviolet microdisk lasers are integrated monolithically into photoniccircuits using a III-nitride on silicon platform with gallium nitride (GaN) asthe main waveguiding layer. The photonic circuits consist of a microdisk and apulley waveguide terminated by out-coupling gratings. We measure qualityfactors up to 3500 under continuous-wave excitation. Lasing is observed from374 nm to 399 nm under pulsed excitation, achieving low threshold energies of$0.14 ~\text{mJ/cm}^2$ per pulse (threshold peak powers of $35~\text{kW/cm}^2$). A large peak to background dynamic of around 200 is observedat the out-coupling grating for small gaps of 50 nm between the disk andwaveguide. These devices operate at the limit of what can be achieved with GaNin terms of operation wavelength.

Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform