English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the zaia usage as premium feature

ZAIA

Presents the pdf analysis as premium feature

PDF Analysis

Insights

Presents the summarisation as premium feature

Summarisation

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the access of premium content as premium feature

Premium Content

Zendy Tools

Zendy Open

We report on integrated erbium-doped waveguide lasers designed for silicon photonic systems. The distributed Bragg reflector laser cavities consist of silicon nitride waveguide and grating features defined by wafer-scale immersion lithography and a top erbium-doped aluminum oxide layer deposited as the final step in the fabrication process. The resulting inverted ridge waveguide yields high optical intensity overlap with the active medium for both the 0.98 μm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of &gt;93%. We obtain output powers of up to 5 mW and show lasing at widely spaced wavelengths within both the C and L bands of the erbium gain spectrum (1536, 1561, and 1596 nm).

C- and L-band erbium-doped waveguide lasers with wafer-scale silicon nitride cavities