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We have realized and measured a GaAs nanocavity in a slab photonic crystalbased on the design by Kuramochi et al. [Appl. Phys.Lett., \textbf{88}, 041112,(2006)]. We measure a quality factor Q=700,000, which proves that ultra-high Qnanocavities are also feasible in GaAs. We show that, due to larger two-photonabsorption (TPA) in GaAs, nonlinearities appear at the microwatt-level and willbe more functional in gallium arsenide than in silicon nanocavities.

GaAs photonic crystal cavity with ultra-high Q: microwatt nonlinearity at 1.55 $\mu $m