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A systematic dispersion engineering approach is presented toward designing aIII-Nitride micro-resonator for a blue/UV frequency comb. The motivation forthis endeavor is to fill the need for compact, coherent, multi-wavelengthphoton sources that can be paired with, e.g., the $^{171}{\textrm{Yb}}^{+}$ ionin a photonic integrated chip for optical sensing, time-keeping, and quantumcomputing applications. The challenge is to overcome the normal materialdispersion exhibited by the otherwise ideal i.e., low-loss andlarge-Kerr-coefficient) AlGaN family of materials, as this is a prerequisitefor bright-soliton Kerr comb generation. The proposed approach exploits theavoided-crossing phenomenon in coupled waveguides to achieve strong anomalousdispersion in a desired wavelength range. The resulting designs reveal a widerange of dispersion response tunability, and are realizable with the currentstate-of-the-art growth and fabrication methods for AlGaN semiconductors.Numerical simulations of the spatio-temporal evolution of the intra-cavityfield under continuous-wave laser pumping indicate that such a structure iscapable of generating a broadband blue/UV bright-soliton Kerr frequency comb.

Advanced dispersion engineering of a III-Nitride micro-resonator for a blue/UV frequency comb