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We investigate Tamm plasmon (TP) modes in a metal/semiconductor distributedBragg reflector (DBR) interface. A thin Ag (silver) layer with an optimizedthickness (~ 55 nm from simulation) was deposited on nanoporous GaN DBRsfabricated using electrochemical etching on freestanding semipolar GaNsubstrates. The reflectivity spectra of the DBRs are compared before and afterthe Ag deposition and with that of a blanket Ag layer deposited on GaN. Theresults indicate presence of a TP mode at ~ 455 nm on the structure after theAg deposition. An active medium can also be accommodated within the mode foroptoelectronics and photonics. Moreover, the simulation results predict asensitivity of the TP mode wavelength to the ambient (~ 4 nm shift whenchanging the ambient within the pores from air with n = 1 to isopropanol n =1.3) , suggesting an application of the nanoporous GaN based TP structure foroptical sensing.

Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics