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Silicon-organic hybrid (SOH) electro-optic (EO) modulators combine smallfootprint with low operating voltage and hence low power dissipation, thuslending themselves to on-chip integration of large-scale device arrays. Here wedemonstrate an electrical packaging concept that enables high-densityradio-frequency (RF) interfaces between on-chip SOH devices and externalcircuits. The concept combines high-resolution $\mathrm{Al_2O_3}$printed-circuit boards with technically simple metal wire bonds and is amenableto packaging of device arrays with small on-chip bond pad pitches. In a set ofexperiments, we characterize the performance of the underlying RF buildingblocks and we demonstrate the viability of the overall concept by generation ofhigh-speed optical communication signals. Achieving line rates (symbols rates)of 128 Gbit/s (64 GBd) using quadrature-phase-shiftkeying (QPSK) modulation andof 160 Gbit/s (40 GBd) using 16-state quadrature-amplitudemodulation (16QAM),we believe that our demonstration represents an important step in bringing SOHmodulators from proof-of-concept experiments to deployment in commercialenvironments.

Electrically packaged silicon-organic hybrid (SOH) I/Q-modulator for 64 GBd operation