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Achieving strong absorption of low-energy photons is one of the key issues to demonstrate quantum dot solar cells working in the intermediate band regime at practical concentration factors and operating temperatures. Guided-mode resonance effects may enable large enhancement of quantum dot intraband optical transitions. We propose quantum dot thin-film cells designed to have significant field waveguiding in the quantum dot stack region and patterned at the rear-side with a sub-wavelength diffraction grating. Remarkable increase of the optical path length at mid-infrared wavelengths is shown owing to guided-mode resonances. Design guidelines are presented for energy and strength of the second-photon absorption for III-V quantum dots, such as InAs/GaAs and GaSb/GaAs, whose intraband and intersubband transitions roughly extends over the 2 - 8 µm range. The proposed design can also be applied to quantum dot infrared detectors. Angle-selectivity is discussed in view of applications in concentrator photovoltaic systems and infrared imaging systems.

Guided-mode resonance gratings for enhanced mid-infrared absorption in quantum dot intermediate-band solar cells