English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We present a study on electrical and optical trade-offs of the doping map in a ring modulator. Here, we investigate the effects of the high-doped region distance to edge of the waveguide sidewall. Four groups of ring modulators with different rib-to-contact distances are fabricated and measured where the key parameters such as extinction ratio, insertion loss, transmission penalty, and bandwidth are compared quantitatively. Small-signal responses for the selected ring modulators are simulated where results are in agreement with measurement results. We show that, at 4dB extinction ratio, decreasing the high-doped region distance to rib from 800nm to 350nm will increase the bandwidth by 3.8 ×. However, we observed 8.4dB increase the insertion loss. We also show that the high-doped region location affects the trade-off between bandwidth and frequency response magnitude at low frequencies. At 350nm, this trade off is 2.5 × and 3.8× more efficient compared to 550nm and 800nm, respectively.

Optical and electrical trade-offs of rib-to-contact distance in depletion-type ring modulators