English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We report on the new optical gating technique used for the directphotoconductive detection of short pulses of terahertz radiation with theresolution up to 250 femtoseconds. The femtosecond optical laser pulse timedelayed with respect to the THz pulse generated a large concentration of theelectron hole pairs in the AlGaAs/InGaAs High Electron Mobility Transistor(HEMT) drastically increasing the conductivity on the femtosecond scale andeffectively shorting the source and drain. This optical gating quenched theresponse of the plasma waves launched by the THz pulse and allowed us toreproduce the waveform of the THz pulse by varying the time delay between theTHz and quenching optical pulses. The results are in excellent agreement withthe electro-optic effect measurements and with our hydrodynamic model thatpredicts the ultra-fast transistor plasmonic response at the time scale muchshorter than the electron transit time, in full agreement with the measureddata.

New Optical Gating Technique for Detection of Electric Field Waveforms with Subpicosecond Resolution