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The technique of molecular beam epitaxy has recently been used to demonstrate the growth of terahertz frequency GaAs/AlGaAs quantum cascade lasers (QCL) with Watt-level optical output powers. In this paper, we discuss the critical importance of achieving accurate layer thicknesses and alloy compositions during growth, and demonstrate that precise growth control as well as run-to-run growth reproducibility is possible. We also discuss the importance of minimizing background doping level in maximizing QCL performance. By selecting high-performance active region designs, and optimizing the injection doping level and device fabrication, we demonstrate total optical (two-facet) output powers as high as 1.56 W.

The MBE growth and optimization of high performance terahertz frequency quantum cascade lasers